1N4948US Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A D-5C
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5C
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A D-5C
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5C
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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Technische Details 1N4948US Microchip Technology
Description: DIODE GEN PURP 1KV 1A D-5C, Packaging: Bulk, Package / Case: SQ-MELF, C, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 12V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: D-5C, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V.
Weitere Produktangebote 1N4948US
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 1N4948US | Hersteller : Microchip Technology | Diodes - General Purpose, Power, Switching |
Produkt ist nicht verfügbar |