Produkte > COMCHIP TECHNOLOGY > 1N5225B-G

1N5225B-G Comchip Technology

1N5221B-G_Thru_1N5267B-G_RevD.pdf
Hersteller: Comchip Technology
Description: DIODE ZENER 500MW DO35 AXIAL
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 29 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
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Technische Details 1N5225B-G Comchip Technology

Description: DIODE ZENER 500MW DO35 AXIAL, Current - Reverse Leakage @ Vr: 50 µA @ 1 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA, Power - Max: 500 mW, Supplier Device Package: DO-35, Impedance (Max) (Zzt): 29 Ohms, Voltage - Zener (Nom) (Vz): 3 V, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Tape & Box (TB).