Produkte > COMCHIP TECHNOLOGY > 1N5231B-G

1N5231B-G Comchip Technology

1N5221B-G_Thru_1N5267B-G_RevD.pdf
Hersteller: Comchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 1N5231B-G Comchip Technology

Description: DIODE ZENER 5.1V 500MW DO35, Package / Case: DO-204AH, DO-35, Axial, Packaging: Tape & Box (TB), Current - Reverse Leakage @ Vr: 5 µA @ 2 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA, Power - Max: 500 mW, Part Status: Obsolete, Supplier Device Package: DO-35, Impedance (Max) (Zzt): 17 Ohms, Voltage - Zener (Nom) (Vz): 5.1 V, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole.