1N5402T-G Comchip Technology
Hersteller: Comchip TechnologyDescription: DIODE GEN PURP 200V 3A DO27
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27 (DO-201AD)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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Technische Details 1N5402T-G Comchip Technology
Description: DIODE GEN PURP 200V 3A DO27, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-27 (DO-201AD), Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5402T-G | Hersteller : Comchip Technology |
Diodes - General Purpose, Power, Switching VRRM=200V, IAV=3A |
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