1N5407GP-E3/73 Vishay General Semiconductor
auf Bestellung 1990 Stücke:
Lieferzeit 59-63 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.25 EUR |
| 10+ | 1.08 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.53 EUR |
| 2000+ | 0.48 EUR |
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Technische Details 1N5407GP-E3/73 Vishay General Semiconductor
Description: DIODE GEN PURP 800V 3A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -50°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V.
Weitere Produktangebote 1N5407GP-E3/73
| Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5407GP-E3/73 | Hersteller : Vishay |
 Diode Switching 800V 3A 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |
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1N5407GP-E3/73 | Hersteller : Vishay |
Diode Switching 800V 3A 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |
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1N5407GP-E3/73 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |