1N5551 BK Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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Technische Details 1N5551 BK Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH, Packaging: Bulk, Package / Case: R-4, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: GPR-4AM, Operating Temperature - Junction: -65°C ~ 200°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 1N5551 BK | Hersteller : Central Semiconductor | Central Semiconductor |
Produkt ist nicht verfügbar |