1N5809 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.98 EUR |
100+ | 10.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5809 Microchip Technology
Description: DIODE GEN PURP 100V 3A AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote 1N5809 nach Preis ab 7.98 EUR bis 17.94 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1N5809 | Hersteller : Microchip Technology | Rectifiers 100V 3A UFR,FRR THT |
auf Bestellung 23 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||
1N5809 | Hersteller : Microchip Technology / Atmel | Rectifiers Rectifier |
auf Bestellung 795 Stücke: Lieferzeit 315-329 Tag (e) |
|
|||||||||||||
1N5809 | Hersteller : Sensitron Semiconductors | Rectifier Diode Switching 100V 6A 30ns 2-Pin Case 304 |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
1N5809 | Hersteller : Sensitron Semiconductors | Rectifier Diode Switching 100V 6A 30ns 2-Pin Case 304 |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
1N5809 | Hersteller : MICROSEMI |
E/6 A, SILICON, RECTIFIER DIODE 1N5809 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-21 Tag (e) |
||||||||||||||
1N5809 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 6A Reverse recovery time: 30ns Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Max. forward voltage: 0.8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
1N5809 | Hersteller : Semtech |
6A SUPERFAST RECT POWER DISCR 1N5809 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
1N5809 | Hersteller : Semtech | Rectifiers Rectifier |
Produkt ist nicht verfügbar |
||||||||||||||
1N5809 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 6A Reverse recovery time: 30ns Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Max. forward voltage: 0.8V |
Produkt ist nicht verfügbar |