Technische Details 1N5811E3 Microchip Technology
Description: DIODE GEN PURP 150V 3A B AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 150 V.
Weitere Produktangebote 1N5811E3 nach Preis ab 12.61 EUR bis 15.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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1N5811E3 | Microchip Technology |
 Diode Switching 150V 6A 2-Pin Case B Bag |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5811E3 | Microchip Technology |
Rectifiers 160V 3A Lead-Free UFR,FRR |
auf Bestellung 558 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5811E3 | Microchip Technology |
Description: DIODE GEN PURP 150V 3A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 1N5811E3 |
|
Hersteller: Microchip Technology
Diode Switching 150V 6A 2-Pin Case B Bag
Diode Switching 150V 6A 2-Pin Case B Bag
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.61 EUR |
| 1N5811E3 |
|
Hersteller: Microchip Technology
Rectifiers 160V 3A Lead-Free UFR,FRR
Rectifiers 160V 3A Lead-Free UFR,FRR
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.36 EUR |
| 10+ | 14.35 EUR |
| 100+ | 13.39 EUR |
| 250+ | 13.36 EUR |
| 1N5811E3 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.92 EUR |