1N5814R Solid State Inc.
Hersteller: Solid State Inc.
Description: DIODE GEN PURP 100V 20A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 20A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 10.43 EUR |
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Technische Details 1N5814R Solid State Inc.
Description: DIODE GEN PURP 100V 20A DO4, Packaging: Box, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-4, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote 1N5814R
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
1N5814R | Hersteller : Microchip Technology | Rectifiers Rectifier |
Produkt ist nicht verfügbar |