1N5820USE3/TR Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE SCHOTTKY 20V 3A B SQMELF
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 22.73 EUR |
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Technische Details 1N5820USE3/TR Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B SQMELF, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 20 V.
Weitere Produktangebote 1N5820USE3/TR nach Preis ab 24.48 EUR bis 24.48 EUR
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1N5820USE3/TR | Hersteller : Microchip Technology |
Description: DIODE SCHOTTKY 20V 3A B SQMELF Packaging: Cut Tape (CT) Part Status: Active Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
auf Bestellung 114 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1N5820USE3/TR | Hersteller : Microchip Technology |
Schottky Diodes & Rectifiers Small-Signal Schottky |
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