1N5820USE3/TR Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE SCHOTTKY 20V 3A B SQMELF
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.19 EUR |
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Technische Details 1N5820USE3/TR Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B SQMELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 20 V.
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1N5820USE3/TR | Hersteller : Microchip Technology |
Description: DIODE SCHOTTKY 20V 3A B SQMELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
Produkt ist nicht verfügbar |
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| 1N5820USE3/TR | Hersteller : Microchip Technology |
Schottky Diodes & Rectifiers Small-Signal Schottky |
Produkt ist nicht verfügbar |