1N5821US/TR Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE SCHOTTKY 30V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5821US/TR Microchip Technology
Description: DIODE SCHOTTKY 30V 3A B SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 30 V.
Weitere Produktangebote 1N5821US/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
1N5821US/TR | Hersteller : Microchip Technology |
Schottky Diodes & Rectifiers Small-Signal Schottky |
Produkt ist nicht verfügbar |