1N5822H Taiwan Semiconductor
auf Bestellung 2464 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.36 EUR |
| 1250+ | 0.24 EUR |
| 2500+ | 0.19 EUR |
| 10000+ | 0.18 EUR |
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Technische Details 1N5822H Taiwan Semiconductor
Description: DIODE SCHOTTKY 40V 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 200pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A, Current - Reverse Leakage @ Vr: 500 µA @ 40 V.
Weitere Produktangebote 1N5822H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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1N5822H | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
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