1N6081US Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2A G-MELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 2A G-MELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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Technische Details 1N6081US Microchip Technology
Description: DIODE GEN PURP 150V 2A G-MELF, Packaging: Bulk, Package / Case: SQ-MELF, G, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: G-MELF (D-5C), Operating Temperature - Junction: -65°C ~ 155°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A, Current - Reverse Leakage @ Vr: 10 µA @ 150 V.
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