1N6628U Microchip Technology

Description: DIODE GP 660V 1.75A SQ-MELF B, Current - Reverse Leakage @ Vr: 2 µA @ 660 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 660 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: B, SQ-MELF, Current - Average Rectified (Io): 1.75A, Capacitance @ Vr, F: 40pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 45 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, B, Packaging: Bulk.