Suchergebnisse für "1n6628u" : 42
Art der Ansicht :
Mindestbestellmenge: 11
Mindestbestellmenge: 29
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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1N6628U | Microchip Technology | Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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1N6628U | Microchip Technology | Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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1N6628U | Microchip Technology | Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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1N6628US | Microchip Technology | Rectifiers 660V UFR,FRR SQ SMT |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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1N6628US/TR | Microchip Technology | Rectifiers 660V UFR,FRR SQ SMT TR |
auf Bestellung 100 Stücke: Lieferzeit 178-182 Tag (e) |
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JANTX1N6628U | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT |
auf Bestellung 100 Stücke: Lieferzeit 178-182 Tag (e) |
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JANTX1N6628US | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT |
auf Bestellung 857 Stücke: Lieferzeit 178-182 Tag (e) |
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1N6628U | Microchip Technology |
Description: DIODE GP 660V 1.75A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V |
Produkt ist nicht verfügbar |
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1N6628U | Microchip Technology | Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF |
Produkt ist nicht verfügbar |
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1N6628U | Microchip Technology | Zener Diodes 660V UFR,FRR SQ SMT |
Produkt ist nicht verfügbar |
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1N6628U/TR | Microchip Technology |
Description: DIODE GP 660V 1.75A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V |
Produkt ist nicht verfügbar |
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1N6628U/TR | Microchip Technology | Zener Diodes 660V UFR,FRR SQ SMT TR |
Produkt ist nicht verfügbar |
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1N6628US | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A A-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V |
Produkt ist nicht verfügbar |
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1N6628US | Microchip Technology | Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag |
Produkt ist nicht verfügbar |
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1N6628US | Microchip Technology | Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag |
Produkt ist nicht verfügbar |
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1N6628US | Sensitron Semiconductors | Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B |
Produkt ist nicht verfügbar |
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1N6628US/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 2.3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 2.3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N6628US/TR | Microchip Technology | Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R |
Produkt ist nicht verfügbar |
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1N6628US/TR | Microchip Technology | Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R |
Produkt ist nicht verfügbar |
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1N6628USJANTX | Sensitron Semiconductors | Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B |
Produkt ist nicht verfügbar |
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1N6628US | MICROSEMI |
E/ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N6628 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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JAN1N6628U | Microsemi Corporation |
Description: DIODE GEN PURP 600V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JAN1N6628U | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT |
Produkt ist nicht verfügbar |
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JAN1N6628U/TR | Microchip Technology |
Description: DIODE GP 660V 1.75A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JAN1N6628U/TR | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT TR |
Produkt ist nicht verfügbar |
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JAN1N6628US | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JAN1N6628US | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT |
Produkt ist nicht verfügbar |
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JAN1N6628US/TR | Microchip Technology |
Description: DIODE GP 660V 1.75A E-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: E-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JAN1N6628US/TR | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT TR |
Produkt ist nicht verfügbar |
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JANTX1N6628U | Microchip Technology |
Description: DIODE GEN PURP 600V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JANTX1N6628U/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 1.75A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JANTX1N6628U/TR | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT TR |
Produkt ist nicht verfügbar |
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JANTX1N6628US | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JANTX1N6628US/TR | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JANTX1N6628US/TR | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT TR |
Produkt ist nicht verfügbar |
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JANTXV1N6628U | Microsemi Corporation |
Description: DIODE GEN PURP 600V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JANTXV1N6628U | Microchip / Microsemi | Rectifiers 660V UFR,FRR |
Produkt ist nicht verfügbar |
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JANTXV1N6628U/TR | Microchip Technology |
Description: DIODE GP 660V 1.75A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JANTXV1N6628U/TR | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT TR |
Produkt ist nicht verfügbar |
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JANTXV1N6628US | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JANTXV1N6628US/TR | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
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JANTXV1N6628US/TR | Microchip / Microsemi | Rectifiers 660V UFR,FRR SQ SMT TR |
Produkt ist nicht verfügbar |
1N6628U |
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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11+ | 15.28 EUR |
1N6628U |
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 15.28 EUR |
1N6628U |
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)1N6628US |
Hersteller: Microchip Technology
Rectifiers 660V UFR,FRR SQ SMT
Rectifiers 660V UFR,FRR SQ SMT
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 28.6 EUR |
100+ | 26.56 EUR |
1N6628US/TR |
Hersteller: Microchip Technology
Rectifiers 660V UFR,FRR SQ SMT TR
Rectifiers 660V UFR,FRR SQ SMT TR
auf Bestellung 100 Stücke:
Lieferzeit 178-182 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 28.88 EUR |
100+ | 26.82 EUR |
JANTX1N6628U |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT
Rectifiers 660V UFR,FRR SQ SMT
auf Bestellung 100 Stücke:
Lieferzeit 178-182 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 36.48 EUR |
100+ | 33.88 EUR |
JANTX1N6628US |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT
Rectifiers 660V UFR,FRR SQ SMT
auf Bestellung 857 Stücke:
Lieferzeit 178-182 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 36.48 EUR |
100+ | 33.88 EUR |
1N6628U |
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Description: DIODE GP 660V 1.75A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
1N6628U |
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
Produkt ist nicht verfügbar
1N6628U |
Hersteller: Microchip Technology
Zener Diodes 660V UFR,FRR SQ SMT
Zener Diodes 660V UFR,FRR SQ SMT
Produkt ist nicht verfügbar
1N6628U/TR |
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
1N6628U/TR |
Hersteller: Microchip Technology
Zener Diodes 660V UFR,FRR SQ SMT TR
Zener Diodes 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
1N6628US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Description: DIODE GEN PURP 660V 1.75A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
1N6628US |
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag
Produkt ist nicht verfügbar
1N6628US |
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag
Produkt ist nicht verfügbar
1N6628US |
Hersteller: Sensitron Semiconductors
Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B
Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B
Produkt ist nicht verfügbar
1N6628US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Produkt ist nicht verfügbar
1N6628US/TR |
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R
Produkt ist nicht verfügbar
1N6628US/TR |
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R
Produkt ist nicht verfügbar
1N6628USJANTX |
Hersteller: Sensitron Semiconductors
Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B
Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B
Produkt ist nicht verfügbar
1N6628US |
Produkt ist nicht verfügbar
JAN1N6628U |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628U |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT
Rectifiers 660V UFR,FRR SQ SMT
Produkt ist nicht verfügbar
JAN1N6628U/TR |
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628U/TR |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JAN1N6628US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628US |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT
Rectifiers 660V UFR,FRR SQ SMT
Produkt ist nicht verfügbar
JAN1N6628US/TR |
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628US/TR |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTX1N6628U |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628U/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628U/TR |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTX1N6628US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628US/TR |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTXV1N6628U |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628U/TR |
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628U/TR |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTXV1N6628US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628US/TR |
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar