Suchergebnisse für "1n6628u" : 42

Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
1N6628U 1N6628U Microchip Technology sa7-57.pdf Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
11+15.28 EUR
Mindestbestellmenge: 11
1N6628U 1N6628U Microchip Technology sa7-57.pdf Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
29+15.28 EUR
Mindestbestellmenge: 29
1N6628U 1N6628U Microchip Technology sa7-57.pdf Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
1N6628US 1N6628US Microchip Technology SD53A-1592380.pdf Rectifiers 660V UFR,FRR SQ SMT
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.6 EUR
100+ 26.56 EUR
1N6628US/TR 1N6628US/TR Microchip Technology SD53A-1592380.pdf Rectifiers 660V UFR,FRR SQ SMT TR
auf Bestellung 100 Stücke:
Lieferzeit 178-182 Tag (e)
1+28.88 EUR
100+ 26.82 EUR
JANTX1N6628U Microchip / Microsemi SA7_57-1592199.pdf Rectifiers 660V UFR,FRR SQ SMT
auf Bestellung 100 Stücke:
Lieferzeit 178-182 Tag (e)
1+36.48 EUR
100+ 33.88 EUR
JANTX1N6628US JANTX1N6628US Microchip / Microsemi SD53A-1592380.pdf Rectifiers 660V UFR,FRR SQ SMT
auf Bestellung 857 Stücke:
Lieferzeit 178-182 Tag (e)
1+36.48 EUR
100+ 33.88 EUR
1N6628U 1N6628U Microchip Technology 1N6626US%2C1N6631US.pdf Description: DIODE GP 660V 1.75A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
1N6628U 1N6628U Microchip Technology sa7-57.pdf Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
Produkt ist nicht verfügbar
1N6628U Microchip Technology 1N6626US%2C1N6631US.pdf Zener Diodes 660V UFR,FRR SQ SMT
Produkt ist nicht verfügbar
1N6628U/TR 1N6628U/TR Microchip Technology Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
1N6628U/TR Microchip Technology Zener Diodes 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
1N6628US 1N6628US Microchip Technology 11069-sd53a-datasheet Description: DIODE GEN PURP 660V 1.75A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
1N6628US 1N6628US Microchip Technology sd53a.pdf Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag
Produkt ist nicht verfügbar
1N6628US 1N6628US Microchip Technology sd53a.pdf Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag
Produkt ist nicht verfügbar
1N6628US 1N6628US Sensitron Semiconductors 5077.pdf Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B
Produkt ist nicht verfügbar
1N6628US/TR 1N6628US/TR Microchip Technology 11069-sd53a-datasheet Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Produkt ist nicht verfügbar
1N6628US/TR 1N6628US/TR Microchip Technology sd53a.pdf Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R
Produkt ist nicht verfügbar
1N6628US/TR 1N6628US/TR Microchip Technology sd53a.pdf Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R
Produkt ist nicht verfügbar
1N6628USJANTX Sensitron Semiconductors 5077.pdf Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B
Produkt ist nicht verfügbar
1N6628US MICROSEMI 11069-sd53a-datasheet E/ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N6628
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
JAN1N6628U JAN1N6628U Microsemi Corporation 1N6626US%2C1N6631US.pdf Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628U Microchip / Microsemi SD53A-1592380.pdf Rectifiers 660V UFR,FRR SQ SMT
Produkt ist nicht verfügbar
JAN1N6628U/TR JAN1N6628U/TR Microchip Technology Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628U/TR Microchip / Microsemi SD53A-1592380.pdf Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JAN1N6628US JAN1N6628US Microchip Technology Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628US JAN1N6628US Microchip / Microsemi Rectifiers 660V UFR,FRR SQ SMT
Produkt ist nicht verfügbar
JAN1N6628US/TR JAN1N6628US/TR Microchip Technology Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628US/TR Microchip / Microsemi SD53A-1592380.pdf Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTX1N6628U JANTX1N6628U Microchip Technology Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628U/TR JANTX1N6628U/TR Microchip Technology Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628U/TR JANTX1N6628U/TR Microchip / Microsemi SD53A-1592380.pdf Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTX1N6628US JANTX1N6628US Microchip Technology 11069-sd53a-datasheet Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628US/TR JANTX1N6628US/TR Microchip Technology Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628US/TR JANTX1N6628US/TR Microchip / Microsemi SD53A-1592380.pdf Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTXV1N6628U JANTXV1N6628U Microsemi Corporation Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628U Microchip / Microsemi Rectifiers 660V UFR,FRR
Produkt ist nicht verfügbar
JANTXV1N6628U/TR JANTXV1N6628U/TR Microchip Technology Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628U/TR Microchip / Microsemi Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTXV1N6628US JANTXV1N6628US Microchip Technology 11069-sd53a-datasheet Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628US/TR JANTXV1N6628US/TR Microchip Technology Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628US/TR Microchip / Microsemi SD53A-1592380.pdf Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
1N6628U sa7-57.pdf
1N6628U
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+15.28 EUR
Mindestbestellmenge: 11
1N6628U sa7-57.pdf
1N6628U
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
29+15.28 EUR
Mindestbestellmenge: 29
1N6628U sa7-57.pdf
1N6628U
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
1N6628US SD53A-1592380.pdf
1N6628US
Hersteller: Microchip Technology
Rectifiers 660V UFR,FRR SQ SMT
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+28.6 EUR
100+ 26.56 EUR
1N6628US/TR SD53A-1592380.pdf
1N6628US/TR
Hersteller: Microchip Technology
Rectifiers 660V UFR,FRR SQ SMT TR
auf Bestellung 100 Stücke:
Lieferzeit 178-182 Tag (e)
Anzahl Preis ohne MwSt
1+28.88 EUR
100+ 26.82 EUR
JANTX1N6628U SA7_57-1592199.pdf
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT
auf Bestellung 100 Stücke:
Lieferzeit 178-182 Tag (e)
Anzahl Preis ohne MwSt
1+36.48 EUR
100+ 33.88 EUR
JANTX1N6628US SD53A-1592380.pdf
JANTX1N6628US
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT
auf Bestellung 857 Stücke:
Lieferzeit 178-182 Tag (e)
Anzahl Preis ohne MwSt
1+36.48 EUR
100+ 33.88 EUR
1N6628U 1N6626US%2C1N6631US.pdf
1N6628U
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
1N6628U sa7-57.pdf
1N6628U
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF
Produkt ist nicht verfügbar
1N6628U 1N6626US%2C1N6631US.pdf
Hersteller: Microchip Technology
Zener Diodes 660V UFR,FRR SQ SMT
Produkt ist nicht verfügbar
1N6628U/TR
1N6628U/TR
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
1N6628U/TR
Hersteller: Microchip Technology
Zener Diodes 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
1N6628US 11069-sd53a-datasheet
1N6628US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
1N6628US sd53a.pdf
1N6628US
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag
Produkt ist nicht verfügbar
1N6628US sd53a.pdf
1N6628US
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF Bag
Produkt ist nicht verfügbar
1N6628US 5077.pdf
1N6628US
Hersteller: Sensitron Semiconductors
Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B
Produkt ist nicht verfügbar
1N6628US/TR 11069-sd53a-datasheet
1N6628US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Produkt ist nicht verfügbar
1N6628US/TR sd53a.pdf
1N6628US/TR
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R
Produkt ist nicht verfügbar
1N6628US/TR sd53a.pdf
1N6628US/TR
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 1.75A 45ns 2-Pin E-MELF T/R
Produkt ist nicht verfügbar
1N6628USJANTX 5077.pdf
Hersteller: Sensitron Semiconductors
Rectifier Diode Switching 600V 4A 30ns 2-Pin MELF-B
Produkt ist nicht verfügbar
1N6628US 11069-sd53a-datasheet
Hersteller: MICROSEMI
E/ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N6628
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
JAN1N6628U 1N6626US%2C1N6631US.pdf
JAN1N6628U
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628U SD53A-1592380.pdf
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT
Produkt ist nicht verfügbar
JAN1N6628U/TR
JAN1N6628U/TR
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628U/TR SD53A-1592380.pdf
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JAN1N6628US
JAN1N6628US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628US
JAN1N6628US
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT
Produkt ist nicht verfügbar
JAN1N6628US/TR
JAN1N6628US/TR
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JAN1N6628US/TR SD53A-1592380.pdf
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTX1N6628U
JANTX1N6628U
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628U/TR
JANTX1N6628U/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628U/TR SD53A-1592380.pdf
JANTX1N6628U/TR
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTX1N6628US 11069-sd53a-datasheet
JANTX1N6628US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628US/TR
JANTX1N6628US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTX1N6628US/TR SD53A-1592380.pdf
JANTX1N6628US/TR
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTXV1N6628U
JANTXV1N6628U
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628U
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR
Produkt ist nicht verfügbar
JANTXV1N6628U/TR
JANTXV1N6628U/TR
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628U/TR
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar
JANTXV1N6628US 11069-sd53a-datasheet
JANTXV1N6628US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628US/TR
JANTXV1N6628US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
JANTXV1N6628US/TR SD53A-1592380.pdf
Hersteller: Microchip / Microsemi
Rectifiers 660V UFR,FRR SQ SMT TR
Produkt ist nicht verfügbar