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Technische Details 1N6628US Microchip Technology
Description: DIODE GEN PURP 660V 1.75A A-MELF, Current - Reverse Leakage @ Vr: 2 µA @ 660 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 660 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: A-MELF, Current - Average Rectified (Io): 1.75A, Capacitance @ Vr, F: 40pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Bulk.
Weitere Produktangebote 1N6628US
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| 1N6628US | MICROSEMI |
 E/ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N6628Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
1N6628US | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A A-MELF Current - Reverse Leakage @ Vr: 2 µA @ 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Voltage - DC Reverse (Vr) (Max): 660 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: A-MELF Current - Average Rectified (Io): 1.75A Capacitance @ Vr, F: 40pF @ 10V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, A Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 1N6628US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A A-MELF
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Current - Average Rectified (Io): 1.75A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Description: DIODE GEN PURP 660V 1.75A A-MELF
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Current - Average Rectified (Io): 1.75A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH