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1PS59SB10,115

1PS59SB10,115 NXP Semiconductors


217921880487741ps59sb10.pdf Hersteller: NXP Semiconductors
Rectifier Diode Schottky 30V 0.2A 5ns 3-Pin MPAK T/R
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Technische Details 1PS59SB10,115 NXP Semiconductors

Description: DIODE SCHOT 30V 200MA SMT3 MPAK, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 5 ns, Technology: Schottky, Capacitance @ Vr, F: 10pF @ 1V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SMT3; MPAK, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA, Current - Reverse Leakage @ Vr: 2 µA @ 25 V.

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1PS59SB10,115 1PS59SB10,115 Hersteller : NXP USA Inc. 1PS59SB10_DS_Rev_Feb2017.pdf Description: DIODE SCHOT 30V 200MA SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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