Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 1SS193,LF
1SS193,LF

1SS193,LF Toshiba Semiconductor and Storage

1SS193_datasheet_en_20171019.pdf?did=3272&prodName=1SS193 Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.058 EUR
6000+ 0.054 EUR
9000+ 0.045 EUR
30000+ 0.044 EUR
Mindestbestellmenge: 3000
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Technische Details 1SS193,LF Toshiba Semiconductor and Storage

Description: DIODE GEN PURP 80V 100MA S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: S-Mini, Operating Temperature - Junction: 125°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.

Weitere Produktangebote 1SS193,LF nach Preis ab 0.065 EUR bis 0.51 EUR

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1SS193,LF 1SS193,LF Hersteller : Toshiba Semiconductor and Storage 1SS193_datasheet_en_20171019.pdf?did=3272&prodName=1SS193 Description: DIODE GEN PURP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 55824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
75+ 0.24 EUR
153+ 0.12 EUR
500+ 0.096 EUR
1000+ 0.067 EUR
Mindestbestellmenge: 53
1SS193,LF 1SS193,LF Hersteller : Toshiba 1SS193_datasheet_en_20171019-1916076.pdf Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR
auf Bestellung 56010 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
103+0.51 EUR
148+ 0.35 EUR
358+ 0.15 EUR
1000+ 0.1 EUR
3000+ 0.078 EUR
9000+ 0.068 EUR
24000+ 0.065 EUR
Mindestbestellmenge: 103
1SS193,LF 1SS193,LF Hersteller : Toshiba 2dst_1ss193-tde_en_1734.pdf Rectifier Diode Switching 85V 0.1A 4ns 3-Pin S-Mini T/R
Produkt ist nicht verfügbar
1SS193,LF Hersteller : Toshiba 2dst_1ss193-tde_en_1734.pdf Rectifier Diode Switching 85V 0.1A 4ns 3-Pin S-Mini T/R
Produkt ist nicht verfügbar
1SS193,LF 1SS193,LF Hersteller : Toshiba 2dst_1ss193-tde_en_1734.pdf Rectifier Diode Switching 85V 0.1A 4ns 3-Pin S-Mini T/R
Produkt ist nicht verfügbar