1SS306TE85LF

1SS306TE85LF Toshiba Semiconductor and Storage


1SS306_datasheet_en_20221020.pdf?did=3298&prodName=1SS306 Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 100MA SC61B
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 1SS306TE85LF Toshiba Semiconductor and Storage

Description: DIODE ARRAY GP 200V 100MA SC61B, Packaging: Tape & Reel (TR), Package / Case: SC-61AA, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 60 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 100mA, Supplier Device Package: SC-61B, Operating Temperature - Junction: 125°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.

Weitere Produktangebote 1SS306TE85LF nach Preis ab 0.21 EUR bis 3.22 EUR

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1SS306TE85LF 1SS306TE85LF Hersteller : Toshiba Semiconductor and Storage 1SS306_datasheet_en_20221020.pdf?did=3298&prodName=1SS306 Description: DIODE ARRAY GP 200V 100MA SC61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 8863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
40+0.44 EUR
100+0.30 EUR
500+0.23 EUR
1000+0.21 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
1SS306TE85LF 1SS306TE85LF Hersteller : Toshiba 1SS306_datasheet_en_20240723-907384.pdf Small Signal Switching Diodes 0.1A 200V Switching High-Speed Diode
auf Bestellung 23043 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.22 EUR
10+2.50 EUR
100+1.85 EUR
500+1.56 EUR
1000+1.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
1SS306TE85LF 1SS306TE85LF
Produktcode: 85955
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1SS306_datasheet_en_20221020.pdf?did=3298&prodName=1SS306 Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
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