Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 1SS307E,L3F
1SS307E,L3F

1SS307E,L3F Toshiba Semiconductor and Storage

1SS307E_datasheet_en_20181116.pdf?did=28816&prodName=1SS307E Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.039 EUR
16000+0.035 EUR
24000+0.033 EUR
40000+0.031 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 1SS307E,L3F Toshiba Semiconductor and Storage

Description: DIODE GEN PURP 80V 100MA SC79, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Capacitance @ Vr, F: 6pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: SC-79, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA, Current - Reverse Leakage @ Vr: 10 nA @ 80 V.

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1SS307E,L3F 1SS307E,L3F Hersteller : Toshiba Semiconductor and Storage 1SS307E_datasheet_en_20181116.pdf?did=28816&prodName=1SS307E Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 53844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
150+0.12 EUR
224+0.079 EUR
500+0.06 EUR
1000+0.053 EUR
2000+0.048 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
1SS307E,L3F 1SS307E,L3F Hersteller : Toshiba 4241393441333531463531343238363642434430373741323633453742413532.pdf Small Signal Switching Diodes Switching diode SNG Low leak current
auf Bestellung 54123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+0.23 EUR
23+0.12 EUR
100+0.095 EUR
500+0.065 EUR
1000+0.051 EUR
2500+0.049 EUR
5000+0.03 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
1SS307E,L3F Hersteller : Toshiba 1ss307e_datasheet_en_20181116.pdf Switching Diodes Silicon Epitaxial Planar
Produkt ist nicht verfügbar
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