1SS307E,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.046 EUR |
| 16000+ | 0.042 EUR |
| 24000+ | 0.039 EUR |
| 40000+ | 0.037 EUR |
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Technische Details 1SS307E,L3F Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC79, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Capacitance @ Vr, F: 6pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: SC-79, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA, Current - Reverse Leakage @ Vr: 10 nA @ 80 V.
Weitere Produktangebote 1SS307E,L3F nach Preis ab 0.042 EUR bis 0.27 EUR
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1SS307E,L3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SC79 Current - Reverse Leakage @ Vr: 10 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SC-79 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 6pF @ 0V, 1MHz Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
auf Bestellung 53844 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS307E,L3F | Toshiba |
Small Signal Switching Diodes Switching diode SNG Low leak current |
auf Bestellung 51985 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 1SS307E,L3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC79
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-79
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 80V 100MA SC79
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-79
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 53844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.21 EUR |
| 150+ | 0.14 EUR |
| 224+ | 0.094 EUR |
| 500+ | 0.071 EUR |
| 1000+ | 0.063 EUR |
| 2000+ | 0.057 EUR |
| 1SS307E,L3F |
|
Hersteller: Toshiba
Small Signal Switching Diodes Switching diode SNG Low leak current
Small Signal Switching Diodes Switching diode SNG Low leak current
auf Bestellung 51985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 0.27 EUR |
| 23+ | 0.14 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.061 EUR |
| 2500+ | 0.058 EUR |
| 5000+ | 0.042 EUR |