1SS352,H3F

1SS352,H3F Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC76-2
Packaging: Tape & Reel (TR)
Package / Case: SC-76A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-76-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 276000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.048 EUR
6000+ 0.046 EUR
9000+ 0.039 EUR
30000+ 0.036 EUR
75000+ 0.031 EUR
150000+ 0.026 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details 1SS352,H3F Toshiba Semiconductor and Storage

Description: DIODE GEN PURP 80V 100MA SC76-2, Packaging: Tape & Reel (TR), Package / Case: SC-76A, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: SC-76-2, Operating Temperature - Junction: 125°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.

Weitere Produktangebote 1SS352,H3F nach Preis ab 0.042 EUR bis 0.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
1SS352,H3F 1SS352,H3F Hersteller : Toshiba Semiconductor and Storage Description: DIODE GEN PURP 80V 100MA SC76-2
Packaging: Cut Tape (CT)
Package / Case: SC-76A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-76-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 287503 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
90+ 0.2 EUR
165+ 0.11 EUR
500+ 0.084 EUR
1000+ 0.058 EUR
Mindestbestellmenge: 63
1SS352,H3F 1SS352,H3F Hersteller : Toshiba 1SS352_datasheet_en_20210806-1760661.pdf Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
auf Bestellung 520919 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
143+0.36 EUR
203+ 0.26 EUR
466+ 0.11 EUR
1000+ 0.086 EUR
3000+ 0.049 EUR
9000+ 0.044 EUR
24000+ 0.042 EUR
Mindestbestellmenge: 143
1SS352,H3F 1SS352,H3F Hersteller : Toshiba 1ss352_datasheet_en_20210806.pdf Rectifier Diode Switching 85V 0.1A 4ns Automotive AEC-Q101 2-Pin USC T/R
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
1SS352,H3F 1SS352,H3F Hersteller : Toshiba 1ss352_datasheet_en_20210806.pdf Rectifier Diode Switching 85V 0.1A 4ns Automotive 2-Pin USC T/R
Produkt ist nicht verfügbar
1SS352,H3F 1SS352,H3F Hersteller : Toshiba 1ss352_datasheet_en_20210806.pdf Rectifier Diode Switching 85V 0.1A 4ns Automotive AEC-Q101 2-Pin USC T/R
Produkt ist nicht verfügbar
1SS352,H3F 1SS352,H3F Hersteller : Toshiba 1ss352_datasheet_en_20210806.pdf Rectifier Diode Switching 85V 0.1A 4ns Automotive AEC-Q101 2-Pin USC T/R
Produkt ist nicht verfügbar