1SS352,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE STANDARD 80V 100MA SC762
Packaging: Tape & Reel (TR)
Package / Case: SC-76A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-76-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.03 EUR |
| 6000+ | 0.03 EUR |
| 15000+ | 0.03 EUR |
| 30000+ | 0.03 EUR |
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Technische Details 1SS352,H3F Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC762, Packaging: Tape & Reel (TR), Package / Case: SC-76A, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: SC-76-2, Operating Temperature - Junction: 125°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.
Weitere Produktangebote 1SS352,H3F nach Preis ab 0.03 EUR bis 0.18 EUR
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1SS352,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA SC762 Packaging: Cut Tape (CT) Package / Case: SC-76A Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-76-2 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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