1SS361FV,L3XGF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: 80V/0.1 A SWITCHING DIODE, SOT-7
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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Technische Details 1SS361FV,L3XGF Toshiba Semiconductor and Storage
Description: 80V/0.1 A SWITCHING DIODE, SOT-7, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100mA, Supplier Device Package: VESM, Operating Temperature - Junction: 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Qualification: AEC-Q101.