1SS403,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
9000+ | 0.11 EUR |
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Produktbewertung abgeben
Technische Details 1SS403,H3F Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 60 ns, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: USC, Operating Temperature - Junction: 125°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Weitere Produktangebote 1SS403,H3F nach Preis ab 0.11 EUR bis 0.86 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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1SS403,H3F | Hersteller : Toshiba | Diodes - General Purpose, Power, Switching IFM=300mA Automotive; AEC-Q |
auf Bestellung 30744 Stücke: Lieferzeit 14-28 Tag (e) |
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1SS403,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 10538 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS403,H3F | Hersteller : Toshiba | Rectifier Diode Switching Si 250V 0.1A 60ns Automotive AEC-Q101 2-Pin USC T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS403,H3F | Hersteller : Toshiba | Rectifier Diode Switching Si 250V 0.1A 60ns Automotive AEC-Q101 2-Pin USC T/R |
Produkt ist nicht verfügbar |
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1SS403,H3F | Hersteller : Toshiba | Rectifier Diode Switching Si 250V 0.1A 60ns Automotive AEC-Q101 2-Pin USC T/R |
Produkt ist nicht verfügbar |
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1SS403,H3F | Hersteller : Toshiba | Rectifier Diode Switching Si 250V 0.1A 60ns Automotive 2-Pin USC T/R |
Produkt ist nicht verfügbar |