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1SS403E,L3F

1SS403E,L3F Toshiba

1SS403E_datasheet_en_20181116-1853401.pdf Hersteller: Toshiba
Diodes - General Purpose, Power, Switching SINGLE SWITCHING DIODE 200V
auf Bestellung 3411 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.52 EUR
10+ 0.36 EUR
100+ 0.15 EUR
1000+ 0.088 EUR
2500+ 0.083 EUR
8000+ 0.065 EUR
24000+ 0.063 EUR
Mindestbestellmenge: 6
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Technische Details 1SS403E,L3F Toshiba

Description: DIODE GEN PURP 200V 100MA ESC, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 60 ns, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: ESC, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.

Weitere Produktangebote 1SS403E,L3F nach Preis ab 0.087 EUR bis 0.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
1SS403E,L3F 1SS403E,L3F Hersteller : Toshiba Semiconductor and Storage Description: DIODE GEN PURP 200V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 4053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
2000+ 0.087 EUR
Mindestbestellmenge: 34
1SS403E,L3F Hersteller : Toshiba 1ss403e_datasheet_en_20181116.pdf Silicon Epitaxial Switching Diodes Automotive AEC-Q101
Produkt ist nicht verfügbar
1SS403E,L3F 1SS403E,L3F Hersteller : Toshiba Semiconductor and Storage Description: DIODE GEN PURP 200V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar