1SS54-TB Renesas Electronics America Inc
Hersteller: Renesas Electronics America Inc
Description: DIODE GEN PURP 50V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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Technische Details 1SS54-TB Renesas Electronics America Inc
Description: DIODE GEN PURP 50V 100MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Reverse Recovery Time (trr): 20 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: DO-35, Operating Temperature - Junction: 200°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V.