1SS81TD-E Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: DIODE 150V 200MA DO35
Current - Reverse Leakage @ Vr: 200 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 100 ns
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 2664+ | 0.18 EUR |
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Technische Details 1SS81TD-E Renesas Electronics Corporation
Description: DIODE 150V 200MA DO35, Current - Reverse Leakage @ Vr: 200 nA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: DO-35, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Reverse Recovery Time (trr): 100 ns, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bulk.