20ETS08STRL Vishay General Semiconductor - Diodes Division


20ETS.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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Technische Details 20ETS08STRL Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 800V 20A TO263AB, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 100 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Obsolete, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 20A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io).