20KPA112CA MDE Semiconductor Inc
Hersteller: MDE Semiconductor IncDescription: TVS DIODE UP 112VRWM 182VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 111A
Voltage - Reverse Standoff (Typ): 112V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 125.1V
Voltage - Clamping (Max) @ Ipp: 182V
Power - Peak Pulse: 20000W (20kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.96 EUR |
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Technische Details 20KPA112CA MDE Semiconductor Inc
Category: Bidirectional TVS THT diodes, Description: Diode: TVS; 131.4V; 111A; bidirectional; ±5%; P600; 20kW; reel,tape, Manufacturer series: 20KPA, Case: P600, Features of semiconductor devices: glass passivated, Mounting: THT, Type of diode: TVS, Leakage current: 2µA, Tolerance: ±5%, Max. forward impulse current: 111A, Max. off-state voltage: 112V, Breakdown voltage: 131.4V, Peak pulse power dissipation: 20kW, Semiconductor structure: bidirectional, Kind of package: reel; tape.
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20KPA112CA | Hersteller : LITTELFUSE |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 131.4V; 111A; bidirectional; ±5%; P600; 20kW; reel,tape Manufacturer series: 20KPA Case: P600 Features of semiconductor devices: glass passivated Mounting: THT Type of diode: TVS Leakage current: 2µA Tolerance: ±5% Max. forward impulse current: 111A Max. off-state voltage: 112V Breakdown voltage: 131.4V Peak pulse power dissipation: 20kW Semiconductor structure: bidirectional Kind of package: reel; tape |
Produkt ist nicht verfügbar |