2300F Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 20V 6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.049 EUR |
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Technische Details 2300F Goford Semiconductor
Description: MOSFET N-CH 20V 6A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V, Power Dissipation (Max): 1.25W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V.
Weitere Produktangebote 2300F nach Preis ab 0.036 EUR bis 0.53 EUR
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2300F | Hersteller : Goford Semiconductor |
Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V |
auf Bestellung 2889 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2300F | Hersteller : GOFORD Semiconductor |
N-CH,20V,6A,RD(max) Less Than 27mOhm at 4.5V,RD(max)41mOhm at 2.5V,VTH 0.5V to 0.9V,SOT-23 |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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2300F | Hersteller : Goford Semiconductor |
Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V |
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