25P06 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
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Technische Details 25P06 Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -32A; 50W; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -32A, Power dissipation: 50W, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 44nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote 25P06 nach Preis ab 0.51 EUR bis 2.4 EUR
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25P06 | GOFORD Semiconductor |
P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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25P06 | GOFORD Semiconductor |
P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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25P06 | Goford Semiconductor |
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V |
auf Bestellung 914 Stücke: Lieferzeit 10-14 Tag (e) |
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| 25P06 |
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Hersteller: GOFORD Semiconductor
P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252
P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 148+ | 1.17 EUR |
| 149+ | 1.14 EUR |
| 211+ | 0.79 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.55 EUR |
| 25P06 |
|
Hersteller: GOFORD Semiconductor
P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252
P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 148+ | 1.17 EUR |
| 149+ | 1.12 EUR |
| 211+ | 0.76 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.51 EUR |
| 25P06 |
|
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 14+ | 1.5 EUR |
| 50+ | 1.12 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |