2DB1132R-13

2DB1132R-13

2DB1132R-13

Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 1A SOT89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Frequency - Transition: 190MHz
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: 2DB1132
Supplier Device Package: SOT-89-3
Package / Case: TO-243AA

ds31142.pdf
verfügbar/auf Bestellung
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)

2500+ 0.3 EUR
5000+ 0.29 EUR

Technische Details 2DB1132R-13

Description: TRANS PNP 32V 1A SOT89-3, Base Part Number: 2DB1132, Supplier Device Package: SOT-89-3, Power - Max: 1W, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 32V, Current - Collector (Ic) (Max): 1A, Transistor Type: PNP, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Frequency - Transition: 190MHz.

Preis 2DB1132R-13 ab 0.29 EUR bis 17.11 EUR

2DB1132R-13
2DB1132R-13
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 1000W -32Vceo
ds31142-63895.pdf
auf Bestellung 3660 Stücke
Lieferzeit 14-28 Tag (e)
43+ 1.08 EUR
58+ 0.79 EUR
100+ 0.49 EUR
500+ 0.46 EUR
2DB1132R-13
2DB1132R-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 1A SOT89-3
Base Part Number: 2DB1132
Supplier Device Package: SOT-89-3
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Frequency - Transition: 190MHz
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Active
Packaging: Cut Tape (CT)
ds31142.pdf
auf Bestellung 5133 Stücke
Lieferzeit 21-28 Tag (e)
21+ 1.12 EUR
27+ 0.87 EUR
28+ 0.83 EUR
100+ 0.52 EUR
500+ 0.49 EUR
1000+ 0.33 EUR
2DB1132R-13
2DB1132R-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 1A SOT89-3
Base Part Number: 2DB1132
Supplier Device Package: SOT-89-3
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Frequency - Transition: 190MHz
ds31142.pdf
auf Bestellung 6488 Stücke
Lieferzeit 21-28 Tag (e)
2+ 17.11 EUR
10+ 2.5 EUR
100+ 0.67 EUR
500+ 0.51 EUR
1000+ 0.34 EUR
2DB1132R-13
Hersteller: DIODES INC
PNP TRANSISTOR 2A HFE180 SOT89
ds31142.pdf
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