2N3714

2N3714 NTE Electronics, Inc


2N3714.pdf Hersteller: NTE Electronics, Inc
Description: TRANS NPN 80V 10A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
auf Bestellung 132 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.68 EUR
10+ 4.45 EUR
20+ 4.21 EUR
50+ 3.98 EUR
100+ 3.87 EUR
Mindestbestellmenge: 6
Produktrezensionen
Produktbewertung abgeben

Technische Details 2N3714 NTE Electronics, Inc

Description: TRANS NPN 80V 10A TO3, Packaging: Bag, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V, Frequency - Transition: 4MHz, Supplier Device Package: TO-3, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 150 W.

Weitere Produktangebote 2N3714

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2N3714 2N3714 Hersteller : STMicroelectronics 2N3714.pdf Bipolar Transistors - BJT
Produkt ist nicht verfügbar
2N3714 Hersteller : Toshiba 2N3714.pdf Bipolar Transistors - BJT
Produkt ist nicht verfügbar