2N4449UB

2N4449UB Microchip Technology


2n2369a.pdf Hersteller: Microchip Technology
Trans GP BJT NPN 20V 400mW 4-Pin Case UB Bag
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Technische Details 2N4449UB Microchip Technology

Description: TRANS NPN 20V UB, Packaging: Bulk, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 400nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V, Supplier Device Package: UB, Grade: Military, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 360 mW, Qualification: MIL-PRF-19500/317.

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2N4449UB 2N4449UB Hersteller : Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 20V UB
Packaging: Bulk
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
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2N4449UB Hersteller : Microchip Technology 8893-lds-0057-datasheet Bipolar Transistors - BJT Small-Signal BJT
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