Technische Details 2N4449UB Microchip Technology
Description: TRANS NPN 20V UB, Qualification: MIL-PRF-19500/317, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Grade: Military, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V, Current - Collector Cutoff (Max): 400nA, Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Packaging: Bulk.
Weitere Produktangebote 2N4449UB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
2N4449UB | Microchip Technology |
 Description: TRANS NPN 20V UBQualification: MIL-PRF-19500/317 Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 20 V Grade: Military Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Current - Collector Cutoff (Max): 400nA Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N4449UB | Microchip Technology |
Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N4449UB |
|
Hersteller: Microchip Technology
Description: TRANS NPN 20V UB
Qualification: MIL-PRF-19500/317
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Bulk
Description: TRANS NPN 20V UB
Qualification: MIL-PRF-19500/317
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N4449UB |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH