Technische Details 2N5610 NEC
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 2.5mA, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 25 W.
Weitere Produktangebote 2N5610
Foto | Bezeichnung | Hersteller | Beschreibung |
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2N5610 | Hersteller : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 2.5mA Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
Produkt ist nicht verfügbar |
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2N5610 | Hersteller : Microchip Technology | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |