2N6766T1
2N6766T1
Hersteller: Microsemi CorporationDescription: MOSFET N-CH 200V 30A TO254AA
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
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Technische Details 2N6766T1
Description: MOSFET N-CH 200V 30A TO254AA, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 200V, Package / Case: TO-254-3, TO-254AA (Straight Leads), Supplier Device Package: TO-254AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 4W (Ta), 150W (Tc), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Bulk, Manufacturer: Microsemi Corporation.