2N6849
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12 Stücke
Lieferzeit 7-21 Tag (e)
auf Bestellung 12 Stücke
Lieferzeit 7-21 Tag (e)
Technische Details 2N6849
Description: MOSFET P-CH 100V 6.5A TO39, Packaging: Bulk, Part Status: Obsolete, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V, Vgs (Max): ±20V, Power Dissipation (Max): 800mW (Ta), 25W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-39, Package / Case: TO-205AF Metal Can.
Preis 2N6849 ab 0 EUR bis 0 EUR
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2N6849 Hersteller: Infineon Technologies Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 
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auf Bestellung 1 Stücke  Lieferzeit 14-21 Tag (e) |
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;%20;%203.jpg "2N6849") Hersteller: Microsemi Corporation Description: MOSFET P-CH 100V 6.5A TO39 Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can
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