2N6849

2N6849

Hersteller: MICROSEMI
TO-39/P-CHANNEL MOSFET 2N6849
Anzahl je Verpackung: 1 Stücke

8809-lds-0009-datasheet
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12 Stücke
Lieferzeit 7-21 Tag (e)

Technische Details 2N6849

Description: MOSFET P-CH 100V 6.5A TO39, Packaging: Bulk, Part Status: Obsolete, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V, Vgs (Max): ±20V, Power Dissipation (Max): 800mW (Ta), 25W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-39, Package / Case: TO-205AF Metal Can.

Preis 2N6849 ab 0 EUR bis 0 EUR

2N6849
Hersteller: Infineon Technologies
Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
8809-lds-0009-datasheet
auf Bestellung 1 Stücke
Lieferzeit 14-21 Tag (e)
2N6849
2N6849
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AF Metal Can
8809-lds-0009-datasheet
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