2N7000-D26Z ON Semiconductor
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.15 EUR |
| 6000+ | 0.13 EUR |
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Produktbewertung abgeben
Technische Details 2N7000-D26Z ON Semiconductor
Description: MOSFET N-CH 60V 200MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote 2N7000-D26Z nach Preis ab 0.13 EUR bis 0.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N7000-D26Z | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | Hersteller : onsemi |
Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000-D26Z | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 387 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000-D26Z | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | Hersteller : onsemi |
Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 15902 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000-D26Z | Hersteller : onsemi / Fairchild |
MOSFET N-CHANNEL 60V 200mA |
auf Bestellung 31553 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7000-D26Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | Hersteller : ONSEMI |
Description: ONSEMI - 2N7000-D26Z - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 5 ohm, TO-92, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 400mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 5ohm |
auf Bestellung 15520 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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2N7000-D26Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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2N7000-D26Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |