2N7002-T1-GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1779 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 215+ | 0.34 EUR |
| 370+ | 0.19 EUR |
| 540+ | 0.13 EUR |
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Produktbewertung abgeben
Technische Details 2N7002-T1-GE3 VISHAY
Description: MOSFET N-CH 60V 115MA TO236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote 2N7002-T1-GE3 nach Preis ab 0.11 EUR bis 0.65 EUR
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2N7002-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 80mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1779 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
auf Bestellung 2924 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 115MA TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
auf Bestellung 693 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
auf Bestellung 693 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 60V 115mA 0.2W 7.5ohm @ 10V |
auf Bestellung 600982 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 115MA TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 6230 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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2N7002-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |