2N7002-T1-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
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Technische Details 2N7002-T1-GE3 VISHAY
Description: MOSFET N-CH 60V 115MA TO236, Part Status: Active, Supplier Device Package: TO-236, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Package / Case: TO-236-3, SC-59, SOT-23-3.
Weitere Produktangebote 2N7002-T1-GE3 nach Preis ab 0.11 EUR bis 1.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N7002-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
auf Bestellung 2169 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
auf Bestellung 2169 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 115MA TO236 Part Status: Active Supplier Device Package: TO-236 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Package / Case: TO-236-3, SC-59, SOT-23-3 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 115MA TO236 Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: TO-236 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 200mW (Ta) |
auf Bestellung 5928 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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2N7002-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
auf Bestellung 511 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2N7002-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
auf Bestellung 2169 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1045+ | 0.14 EUR |
| 2N7002-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
auf Bestellung 2169 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 698+ | 0.21 EUR |
| 1138+ | 0.13 EUR |
| 1229+ | 0.11 EUR |
| 2N7002-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 581+ | 0.25 EUR |
| 2N7002-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: MOSFET N-CH 60V 115MA TO236
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
| 2N7002-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Description: MOSFET N-CH 60V 115MA TO236
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
auf Bestellung 5928 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.11 EUR |
| 26+ | 0.68 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 2N7002-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 2N7002-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
auf Bestellung 511 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH