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2SK3816-DL-1E

2SK3816-DL-1E onsemi

2SK3816.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 40A TO263-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
auf Bestellung 2039 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
376+1.92 EUR
Mindestbestellmenge: 376
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Technische Details 2SK3816-DL-1E onsemi

Description: MOSFET N-CH 60V 40A TO263-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Power Dissipation (Max): 1.65W (Ta), 50W (Tc), Supplier Device Package: TO-263-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V.

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2SK3816-DL-1E Hersteller : ONSEMI ONSMS35127-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SK3816-DL-1E - 2SK3816-DL-1E, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2039 Stücke:
Lieferzeit 14-21 Tag (e)
2SK3816-DL-1E 2SK3816-DL-1E Hersteller : ON Semiconductor 1604enn8054-d.pdf Trans MOSFET N-CH Si 60V 40A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
2SK3816-DL-1E 2SK3816-DL-1E Hersteller : onsemi 2SK3816.pdf Description: MOSFET N-CH 60V 40A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Produkt ist nicht verfügbar