2SK3816-DL-1E onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 40A TO263-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
auf Bestellung 2039 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 376+ | 1.30 EUR |
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Technische Details 2SK3816-DL-1E onsemi
Description: MOSFET N-CH 60V 40A TO263-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Power Dissipation (Max): 1.65W (Ta), 50W (Tc), Supplier Device Package: TO-263-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V.
Weitere Produktangebote 2SK3816-DL-1E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2SK3816-DL-1E | Hersteller : ONSEMI |
Description: ONSEMI - 2SK3816-DL-1E - 2SK3816-DL-1E, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2039 Stücke: Lieferzeit 14-21 Tag (e) |
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2SK3816-DL-1E | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 40A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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2SK3816-DL-1E | Hersteller : onsemi |
Description: MOSFET N-CH 60V 40A TO263-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 1.65W (Ta), 50W (Tc) Supplier Device Package: TO-263-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V |
Produkt ist nicht verfügbar |