2SK3816-DL-1E onsemi

Description: MOSFET N-CH 60V 40A TO263-2, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: TO-263-2, Power Dissipation (Max): 1.65W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).