2DB1713-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PNP 12V 3A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 900 mW
Description: TRANS PNP 12V 3A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 900 mW
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.2 EUR |
5000+ | 0.19 EUR |
12500+ | 0.18 EUR |
25000+ | 0.17 EUR |
62500+ | 0.16 EUR |
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Technische Details 2DB1713-13 Diodes Incorporated
Description: TRANS PNP 12V 3A SOT89-3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: SOT-89-3, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 900 mW.
Weitere Produktangebote 2DB1713-13 nach Preis ab 0.19 EUR bis 0.77 EUR
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2DB1713-13 | Hersteller : Diodes Incorporated |
Description: TRANS PNP 12V 3A SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 900 mW |
auf Bestellung 106496 Stücke: Lieferzeit 10-14 Tag (e) |
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2DB1713-13 | Hersteller : Diodes Incorporated | Bipolar Transistors - BJT LO VSAT PNP SMT 2.5K |
auf Bestellung 2590 Stücke: Lieferzeit 10-14 Tag (e) |
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2DB1713-13 | Hersteller : Diodes Inc | Trans GP BJT PNP 12V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |