2DD2678-13

2DD2678-13 Diodes Incorporated


ds31637-89030.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K
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Technische Details 2DD2678-13 Diodes Incorporated

Description: TRANS NPN 12V 3A SOT-89-3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V, Frequency - Transition: 170MHz, Supplier Device Package: SOT-89-3, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 900 mW.

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2DD2678-13 2DD2678-13 Hersteller : Diodes Incorporated 2DD2678.pdf Description: TRANS NPN 12V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 900 mW
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