2ED2104S06FXUMA1 Infineon Technologies
auf Bestellung 5000 Stücke:
Lieferzeit 262-266 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.76 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 0.96 EUR |
| 2500+ | 0.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2ED2104S06FXUMA1 Infineon Technologies
Description: LEVEL SHIFT SOI, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 650 V, Supplier Device Package: PG-DSO-8-69, Rise / Fall Time (Typ): 70ns, 35ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.1V, 1.7V, Current - Peak Output (Source, Sink): 290mA, 700mA, Part Status: Active, DigiKey Programmable: Not Verified.
Weitere Produktangebote 2ED2104S06FXUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2ED2104S06FXUMA1 | Hersteller : Infineon Technologies |
 SP001896444 |
Produkt ist nicht verfügbar |
||
| 2ED2104S06FXUMA1 | Hersteller : Infineon Technologies |
650 V Half Bridge Gate Driver with Integrated Bootstrap Diode |
Produkt ist nicht verfügbar |
||
| 2ED2104S06FXUMA1 | Hersteller : Infineon Technologies |
650 V Half Bridge Gate Driver with Integrated Bootstrap Diode |
Produkt ist nicht verfügbar |
||
 |
2ED2104S06FXUMA1 | Hersteller : Infineon Technologies |
Description: LEVEL SHIFT SOI Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|
|
|
2ED2104S06FXUMA1 | Hersteller : Infineon Technologies |
Description: LEVEL SHIFT SOI Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |