2ED2778S01GXTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Box
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 8A
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.7 EUR |
| 10+ | 2.75 EUR |
| 25+ | 2.51 EUR |
| 100+ | 2.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2ED2778S01GXTMA1 Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE VSON-10, Packaging: Box, Package / Case: 10-VFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 7V ~ 18V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 140 V, Supplier Device Package: PG-VSON-10-5, Rise / Fall Time (Typ): 24ns, 12ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2V, Current - Peak Output (Source, Sink): 4A, 8A.
Weitere Produktangebote 2ED2778S01GXTMA1 nach Preis ab 2.16 EUR bis 4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2ED2778S01GXTMA1 | Hersteller : Infineon Technologies |
Gate Drivers LEVEL SHIFT SOI |
auf Bestellung 232 Stücke: Lieferzeit 10-14 Tag (e) |
|