2N1613 TIN/LEAD

2N1613 TIN/LEAD Central Semiconductor Corp


Hersteller: Central Semiconductor Corp
Description: 500MA 800MW TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
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Technische Details 2N1613 TIN/LEAD Central Semiconductor Corp

Description: 500MA 800MW TH TRANSISTOR-SMALL, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Frequency - Transition: 60MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 3 W.

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2N1613 TIN/LEAD 2N1613 TIN/LEAD Hersteller : Central Semiconductor 2n1613.PDF Bipolar Transistors - BJT 75Vcbo 50Vcer 7.0Vebo 500mA 3.0W
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