2N1613 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 500MA 800MW TH TRANSISTOR-SMALL
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Box
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-39
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Technische Details 2N1613 TIN/LEAD Central Semiconductor Corp
Description: 500MA 800MW TH TRANSISTOR-SMALL, Frequency - Transition: 60MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Box, Power - Max: 3 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-39.
Weitere Produktangebote 2N1613 TIN/LEAD
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|---|---|---|---|---|---|
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2N1613 TIN/LEAD | Central Semiconductor |
 Bipolar Transistors - BJT 75Vcbo 50Vcer 7.0Vebo 500mA 3.0W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N1613 TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 75Vcbo 50Vcer 7.0Vebo 500mA 3.0W
Bipolar Transistors - BJT 75Vcbo 50Vcer 7.0Vebo 500mA 3.0W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH