2N1613 CDIL
Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.8/3W; TO39; 12dB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.8/3W
Case: TO39
Current gain: 20...120
Mounting: THT
Kind of package: bulk
Frequency: 60MHz
Noise Figure: 12dB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.8/3W; TO39; 12dB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.8/3W
Case: TO39
Current gain: 20...120
Mounting: THT
Kind of package: bulk
Frequency: 60MHz
Noise Figure: 12dB
auf Bestellung 717 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
69+ | 1.04 EUR |
99+ | 0.73 EUR |
165+ | 0.43 EUR |
221+ | 0.32 EUR |
233+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N1613 CDIL
Description: TRANS NPN 50V 0.5A TO39, Packaging: Tube, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Frequency - Transition: 80MHz, Supplier Device Package: TO-39, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 800 mW.
Weitere Produktangebote 2N1613 nach Preis ab 0.31 EUR bis 48.36 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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2N1613 | Hersteller : CDIL |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.8/3W; TO39; 12dB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.8/3W Case: TO39 Current gain: 20...120 Mounting: THT Kind of package: bulk Frequency: 60MHz Noise Figure: 12dB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 717 Stücke: Lieferzeit 7-14 Tag (e) |
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2N1613 | Hersteller : Harris Corporation |
Description: TRANS NPN 30V 0.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
auf Bestellung 91 Stücke: Lieferzeit 21-28 Tag (e) |
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2N1613 Produktcode: 163262 |
Transistoren > Bipolar-Transistoren NPN |
Produkt ist nicht verfügbar
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2N1613 | Hersteller : Microchip Technology | Trans GP BJT NPN 30V 0.5A 800mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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2N1613 | Hersteller : Microchip Technology | Trans GP BJT NPN 30V 0.5A 800mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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2N1613 | Hersteller : STMicroelectronics |
Description: TRANS NPN 50V 0.5A TO39 Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Frequency - Transition: 80MHz Supplier Device Package: TO-39 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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2N1613 | Hersteller : Microchip Technology |
Description: TRANS NPN 30V 0.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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2N1613 | Hersteller : Microchip Technology | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
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2N1613 | Hersteller : STMicroelectronics | Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
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2N1613 | Hersteller : Infineon Technologies | Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |