2N1711 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 500MA 800MW TH TRANSISTOR-SMALL
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-39
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Box
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Technische Details 2N1711 TIN/LEAD Central Semiconductor Corp
Description: 500MA 800MW TH TRANSISTOR-SMALL, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-39, Frequency - Transition: 70MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Box.
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|---|---|---|---|---|---|
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2N1711 TIN/LEAD | Central Semiconductor |
 Bipolar Transistors - BJT NPN 75Vcbo 50Vceo 7.0Vebo 25pF |
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| 2N1711 TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 75Vcbo 50Vceo 7.0Vebo 25pF
Bipolar Transistors - BJT NPN 75Vcbo 50Vceo 7.0Vebo 25pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH