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2N2218 PBFREE

2N2218 PBFREE Central Semiconductor

2N2218-18A.PDF Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 60Vcbo 30Vceo 5.0Vebo 800mA 800mW
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Lieferzeit 10-14 Tag (e)
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1+3.85 EUR
10+ 3.2 EUR
100+ 2.55 EUR
250+ 2.45 EUR
500+ 2.04 EUR
1000+ 1.81 EUR
2500+ 1.76 EUR
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Technische Details 2N2218 PBFREE Central Semiconductor

Description: TRANS NPN 30V 0.8A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Frequency - Transition: 250MHz, Supplier Device Package: TO-39, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 3 W.

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2N2218 PBFREE 2N2218 PBFREE Hersteller : Central Semiconductor Corp 2N2218-18A.PDF Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
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