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2N2222 TIN/LEAD

2N2222 TIN/LEAD Central Semiconductor


2N2221-1652459.pdf Hersteller: Central Semiconductor
Bipolar Transistors - BJT 60Vcbo 30Vceo 5.0V 800mA 500mW
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Technische Details 2N2222 TIN/LEAD Central Semiconductor

Description: 30V 800MA 400MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 250MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 500 mW.

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2N2222 TIN/LEAD 2N2222 TIN/LEAD Hersteller : Central Semiconductor Corp Description: 30V 800MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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