2N2222 TIN/LEAD Central Semiconductor
auf Bestellung 666 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.33 EUR |
| 10+ | 3.48 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.29 EUR |
| 1000+ | 2.11 EUR |
| 2000+ | 1.8 EUR |
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Technische Details 2N2222 TIN/LEAD Central Semiconductor
Description: 30V 800MA 400MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Supplier Device Package: TO-18, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 250MHz, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 500 mW.
Weitere Produktangebote 2N2222 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N2222 TIN/LEAD | Hersteller : Central Semiconductor Corp |
Description: 30V 800MA 400MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Supplier Device Package: TO-18 Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
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